Use the electromagnetic field stress to study the reliability of the SiGe HBT

-In this paper, we investigate a new reliability damage mechanism in SiGe Heterojunction Bipolar transistor (HBTs).This study differs from conventional HBT/SiGe device reliability associated with other stress. Since it results from an Electromagnetic field aggression which consists of a new stress methodology. The near-field bench is used to disturb with electromagnetic field the Device Under test (DUT) on a localized area, contrary to the disturbance created in the TEM cell. We find that only the base is most sensitive to the disturbance caused, when compared to those on the package, collector and emitter. This is primarily due to the electromagnetic coupling phenomenon between the induced electromagnetic field and the microstrip line connecting the base of the transistor. Degradations in the base current and the current gain are identified. It is induced by a large IB leakage current due to hot carrier which introduces generation/recombination center traps and leads to excess non-ideal base current. Key-Words: HBT, Reliability, EMC, Hot carrier, Simulation.